(Hong Kong)
Product Summary
The mrf6s9130h is a RF power field effect transistor which is designed N-CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. And it is suitable for multicarrier amplifier applications.
Parametrics
mrf6s9130h absolute maximum ratings: (1)Drain-Source Voltage: -0.5, +68 Vdc; (2)Gate-Source Voltage: -0.5, +12 Vdc; (3)Total Device Dissipation @ TC = 25℃: 389 W; (4)Derate above 25℃: 2.2 W/℃; (5)Storage Temperature Range: - 65 to +150℃; (6)Case Operating Temperature: 150 ℃; (7)Operating Junction Temperature: 200℃.
Features
mrf6s9130h features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Lower Thermal Resistance Package; (6)Low Gold Plating Thickness on Leads, 40μ Nominal.; (7)RoHS Compliant; (8)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 MRF6S9130HR3 |
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MOSFET RF N-CHAN 28V 27W NI-780 |
Data Sheet |
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MRF6S9130HR5 |
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MOSFET RF N-CHAN 28V 27W NI-780 |
Data Sheet |
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MRF6S9130HSR3 |
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MOSFET RF N-CHAN 28V 27W NI-780S |
Data Sheet |
Negotiable |
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MRF6S9130HSR5 |
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MOSFET RF N-CHAN 28V 27W NI-780S |
Data Sheet |
Negotiable |
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