Product Summary
The RA30H4452M is a 30-watt RF MOSFET amplifier. It is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. The battery of this device can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases.
Parametrics
RA30H4452M absolute maximum ratings: (1)Drain Voltage: 17 V; (2)Gate Voltage: 6 V; (3)Input Power: 100 mW; (4)Output Power: 45 W; (5)Operation Case Temperature Range: -30 to +110 °C; (6)Storage Temperature Range: -40 to +110 °C.
Features
RA30H4452M features: (1)Enhancement-Mode MOSFET Transistors (IDD=0 @ VDD=12.5V, VGG=0V); (2)Pout>30W, hT>40% @ VDD=12.5V, VGG=5V, Pin=50mW; (3)Broadband Frequency Range: 440-520MHz; (4)Low-Power Control Current IGG=1mA (typ) at VGG=5V; (5)66 x 21 x 9.8 mm; (6)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.
Diagrams
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