(Hong Kong)
Product Summary
The AS4C1M16E5-60JC is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM). It is organized as 1,048,576 words×16bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for use as main memory in personal and portable PCs, workstations, and multimedia and router switch applications.
Parametrics
AS4C1M16E5-60JC absolute maximum ratings: (1)Input voltage VIN: -1.0V to 7.0V; (2)Input voltage (DQs) VDQ: -1.0V to VCC+0.5V; (3)Power supply voltage VCC: -1.0V to 7.0V; (4)Storage temperature TSTG: -65℃ to +150℃; (5)Soldering temperature×time TSOLDER: 260×10 ℃×sec; (6)Power dissipation PD: 1W; (7)Short circuit Output current IOt: 50mA.
Features
AS4C1M16E5-60JC features: (1)Organization: 1,048,576 words × 16 bits ; (2)High speed: 45/50/60ns RAS access time, 20/20/25ns hyper page cycle time, 10/12/15 ns CAS access time; (3)Low power consumption: Active: 740 mW max, Standby: 5.5 mW max, CMOS DQ; (4)Extended data out; (5)1024 refresh cycles, 16 ms refresh interval; (6)TTL-compatible, three-state DQ; (7)JEDEC standard package and pinout: 400 mil, 42-pin SOJ; (8)5V power supply (AS4C1M16E5); (9)Industrial and commercial temperature available.
Diagrams
