(Hong Kong)
Product Summary
The AS4LC256K16EO-60TC is a high performance 4-megabit CMOS Dynamic Random Access Memory (DRAM). It is organized as 262,144 words×16bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels.
Parametrics
AS4LC256K16EO-60TC absolute maximum ratings: (1)Input voltage VIN: -1.0V to +7.0V; (2)Output voltage VOUT: -1.0V to +7.0V; (3)Power supply voltage VCC: -1.0V to +7.0V; (4)Storage temperature TSTG: -55℃ to +150℃; (5)Soldering temperature×time TSOLDER: 260×10 ℃×sec; (6)Power dissipation PD: 1W; (7)Short circuit Output current IOt: 50mA; (8) Latch-up current: 200mA.
Features
AS4LC256K16EO-60TC features: (1)Organization: 262,144 words × 16 bits ; (2)High speed: 45/60ns RAS access time, 10/12/15/20ns column address access time, 7/10/10ns CAS access time; (3)Low power consumption: Active: 280 mW max, Standby: 2.8 mW max, CMOS DQ; (4) EDO page mode; (5)512 refresh cycles, 8 ms refresh interval; (6)TTL-compatible, three-state DQ; (7)JEDEC standard package and pinout: 400 mil, 40-pin SOJ; (8)3.3V power supply; (9) Latch-up current > 200 mA.
Diagrams
