(Hong Kong)
Product Summary
The CY7C197-25VCT is a high-performance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. The CY7C197-25VCT has an automatic power-down feature, reducing the power consumption by 75% when deselected. Writing to the device is accomplished when the Chip Enable (CE) and Write Enable (WE) inputs are both LOW. The output pin stays in a high-impedance state when Chip Enable (CE) is HIGH or Write Enable (WE) is LOW. The CY7C197-25VCT utilizes a die coat to insure alpha immunity.
Parametrics
CY7C197-25VCT absolute maximum ratings: (1)Storage Temperature: −65°C to +150°C; (2)Ambient Temperature with Power Applied: −55°C to +125°C; (3)Supply Voltage to Ground Potential (Pin 24 to Pin 12): −0.5V to +7.0V; (4)DC Voltage Applied to Outputs in High Z State[1]: −0.5V to VCC + 0.5V; (5)DC Input Voltage[1]: −0.5V to VCC + 0.5V; (6)Output Current into Outputs (LOW): 20 mA; (7)Static Discharge Voltage: >2001V; (8)Latch-Up Current: >200 mA.
Features
CY7C197-25VCT features: (1)High speed: 12 ns; (2)CMOS for optimum speed/power; (3)Low active power: 880 mW; (4)Low standby power: 220 mW; (5)TTL-compatible inputs and outputs; (6)Automatic power-down when deselected.
Diagrams
