(Hong Kong)
Product Summary
The fqpf8n80c is a 800V N-Channel MOSFET. The fqpf8n80c N-Channel enhancement mode power field effect transistor is produced using Fairchild proprietary planar stripe, DMOS technology. The fqpf8n80c is suited for high efficiency switch mode power supplies.
Parametrics
fqpf8n80c absolute maximum ratings: (1) Drain-Source Voltage VDSS: 800V; (2) Drain Current- Continuous (Tc=25°C) : 8A, 5.1A (Continuous (Tc=100°C) ; (3) Drain Current- Pulsed IDM: 32A; (4) Gate-Source Voltage VGSS: ±30V; (5) Single Pulsed Avalanche Energy EAS: 850mJ; (6) Avalanche Current IAR: 8A; (7) Operating and Storage Temperature Range Tj, Tstg: -55 to +150°C; (8) Maximum lead temperature for soldering purposes, 1/8 inch from case for 5 seconds TL: 300°C.
Features
fqpf8n80c features: (1) 8A, 800V, RDS (on) = 1.55Ω@VGS=10V; (2) Low gate charge ( typical 35 nC) ; (3) Low Crss ( typical 13 pF) ; (4) Fast switching; (5) 100% avalanche tested; (6) Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FQPF8N80C |
Fairchild Semiconductor |
MOSFET 800V N-Ch Q-FET advance C-Series |
Data Sheet |
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FQPF8N80CXDTU |
Fairchild Semiconductor |
MOSFET 800V N-Ch Q-FET advance C-Series |
Data Sheet |
Negotiable |
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FQPF8N80CYDTU |
Fairchild Semiconductor |
MOSFET HIGH_VOLTAGE |
Data Sheet |
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