Product Summary
The IR2304S is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The IR2304S feature a high pulse current buffer stage designed for minimum driver cross-conduction. The IR2304S can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Parametrics
IR2304S absolute maximum ratings: (1)VB High side floating absolute voltage: -0.3 to 625V; (2)VS High side floating supply offset voltage: VB - 25 to VB + 0.3; (3)VHO High side floating output voltage: VS - 0.3 to VB + 0.3; (4)VCC Low side and logic fixed supply voltage: -0.3 to 25V; (5)VLO Low side output voltage: -0.3 to VCC + 0.3V; (6)VIN Logic input voltage COM: - 0.3 to VCC + 0.3V; (7)dVS/dt Allowable offset supply voltage transient: 50 V/ns; (8)PD Package power dissipation @ TA ≤ +25°C (8 lead PDIP): 1.0w (8 lead SOIC): 0.625w, RthJA Thermal resistance, junction to ambient (8 lead PDIP): 125w, (8 lead SOIC): 200w; (9)TJ Junction temperature: 150°C; (10)TS Storage temperature: -50 to 150°C; (11)TL Lead temperature (soldering, 10 seconds): 300°C.
Features
IR2304S features: (1)Floating channel designed for bootstrap operation Fully operational to +600V; (2)Tolerant to negative transient voltage dV/dt immune; (3)Gate drive supply range from 5 to 20V; (4)Undervoltage lockout for both channels; (5)3.3V, 5V and 15V input logic compatible; (6)Matched propagation delay for both channels; (7)Logic and power ground +/- 5V offset.; (8)Lower di/dt gate driver for better noise immunity; (9)Outputs in phase with inputs; (10)Also available LEAD-FREE (PbF).
Diagrams
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