Product Summary

The IRFB4110QPBF is a HEXFET power MOSFET. The applications of the IRFB4110QPBF include High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High Speed Power Switching, Hard Switched and High Frequency Circuits.

Parametrics

IRFB4110QPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V (Silicon Limited): 180 A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V (Silicon Limited): 130 A; (3)Pulsed Drain Current, IDM: 670 A; (4)PD @TC = 25℃, Maximum Power Dissipation: 370 W; (5)Linear Derating Factor: 2.5 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Peak Diode Recovery, dv/dt: 5.3 V/ns; (8)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 TO 175℃; (9)Soldering Temperature, for 10 seconds(1.6mm from case): 300℃; (10)Mounting torque, 6-32 or M3 screw: 10lb·in (1.1N·m).

Features

IRFB4110QPBF features: (1)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability.

Diagrams

IRFB4110QPBF circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFB4110QPBF
IRFB4110QPBF
International Rectifier
MOSFET
Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFB11N50A
IRFB11N50A
Vishay/Siliconix
MOSFET N-Chan 500V 11 Amp
Data Sheet
0-725: $1.93
725-1000: $1.85
1000-2000: $1.81
IRFB11N50APBF
IRFB11N50APBF
Vishay/Siliconix
MOSFET N-Chan 500V 11 Amp
Data Sheet
0-1: $1.07
1-10: $0.86
10-100: $0.77
100-250: $0.69
IRFB13N50A
IRFB13N50A
Vishay/Siliconix
MOSFET N-Chan 500V 14 Amp
Data Sheet
0-725: $2.48
725-1000: $2.38
1000-2000: $2.32
IRFB13N50APBF
IRFB13N50APBF
Vishay/Siliconix
MOSFET N-Chan 500V 14 Amp
Data Sheet
0-1: $2.11
1-10: $1.69
10-100: $1.54
100-250: $1.39
IRFB16N50K
IRFB16N50K
Vishay/Siliconix
MOSFET N-Chan 500V 17 Amp
Data Sheet
Negotiable 
IRFB16N50KPBF
IRFB16N50KPBF
Vishay/Siliconix
MOSFET N-Chan 500V 17 Amp
Data Sheet
Negotiable