Product Summary

The SI4390DY-T1-E3 is a Fast Switching WFET. It is ideal for: High-Side DC/DC Conversion: Notebook; Server.



Parametrics

SI4390DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: 20 V; (3)Continuous Drain Current (TJ = 150°C)a TA = 25°C ID: 12.5 to 8.5 A; (4)Pulsed Drain Current IDM: 20 A; (5)Continuous Source Current (Diode Conduction)a IS: 2.7 to 1.3 A; (6)Maximum Power Dissipation a TA = 25°C PD: 3.0 to 1.4 W; (7)Operating Junction and Storage Temperature Range TJ , Tstg: -55 to 150°C.

Features

SI4390DY-T1-E3 features: (1)Extremely Low Qgd WFET Technology for Switching Losses; (2)TrenchFET Power MOSFET.

Diagrams

SI4390DY-T1-E3 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SI4390DY-T1-E3
SI4390DY-T1-E3

Vishay/Siliconix

MOSFET 30V 12.5A 3.0W 9.5mohm @ 10V

Data Sheet

0-800: $1.75
800-2500: $1.30
2500-5000: $1.27
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SI4300DY
SI4300DY

Vishay/Siliconix

MOSFET N-CH MOSFET

Data Sheet

Negotiable 
SI4300DY-E3
SI4300DY-E3

Vishay/Siliconix

MOSFET N-CH MOSFET

Data Sheet

Negotiable 
SI4300DY-T1-E3
SI4300DY-T1-E3

Vishay/Siliconix

MOSFET 30 Volt 9.0 Amp 2.5W

Data Sheet

Negotiable 
Si4300-E-BM
Si4300-E-BM

Silicon Labs

RF Wireless Misc Dual-band GSM900 and DCS1800 Pwr Amp

Data Sheet

Negotiable 
Si4300-EVB
Si4300-EVB

Silicon Labs

RF Development Tools Dual-band GSM900 Pwr Amp EVB

Data Sheet

Negotiable 
Si4300T-B-BM
Si4300T-B-BM

Silicon Labs

RF Wireless Misc Triple-band GSM900 Pwr Amp

Data Sheet

Negotiable