(Hong Kong)
Product Summary
The SI4390DY-T1-E3 is a Fast Switching WFET. It is ideal for: High-Side DC/DC Conversion: Notebook; Server.
Parametrics
SI4390DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: 20 V; (3)Continuous Drain Current (TJ = 150°C)a TA = 25°C ID: 12.5 to 8.5 A; (4)Pulsed Drain Current IDM: 20 A; (5)Continuous Source Current (Diode Conduction)a IS: 2.7 to 1.3 A; (6)Maximum Power Dissipation a TA = 25°C PD: 3.0 to 1.4 W; (7)Operating Junction and Storage Temperature Range TJ , Tstg: -55 to 150°C.
Features
SI4390DY-T1-E3 features: (1)Extremely Low Qgd WFET Technology for Switching Losses; (2)TrenchFET Power MOSFET.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 SI4390DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 12.5A 3.0W 9.5mohm @ 10V |
Data Sheet |
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