(Hong Kong)
Product Summary
The SI9422DY-T1 is an N-Channel reduced Qg, fast switching MOSFET.
Parametrics
SI9422DY-T1 absolute maximum ratings: (1)Drain-source voltage: 200 V; (2)Gate-Source voltage: +/-20 V; (3)Drain current - continuous: +/-1.3 or +/-1.7 A; (4)Pulsed drain current: +/- 12A; (5)Continuous source current (diode conduction): 2.1 A; (6)Maximum power dissipation: 1.6 or 2.5 W; (7)Operating junction and storage temperature range: –55 to 150 °C.
Diagrams
