STP10NK60ZFP

STP10NK60ZFP, power MOSFET, 600 V, 36 A, TO

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Price:: US $0.64~0.98 / piece [Get Latest Price]

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Qty (lots)	Price/lot
100 ~ 500 :	0.98 / Piece
500 ~ 1000 :	0.82 / Piece
1000 ~ 1500 :	0.64 / Piece

PartNumber:: STP10NK60ZFP

Brand:: STMicroelectronics - ST | Pack: TO | D/C: 11+

Availability:: Supply Ability: 10000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

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Products Upload time: 2013-08-21

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Part Number:STP10NK60ZFP
US $0.64 - 0.98
Quantity:

piece

Product Summary

The STP10NK60ZFP is an N-Channel zener-protected superMESH power MOSFET. The STP10NK60ZFP is obtained through an extreme optimization of ST established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The STP10NK60ZFP complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. The applications of the STP10NK60ZFP are: (1)high current, high speed switching; (2)ideal for off-line power supplies, adaptors and pfc; (3)lighting.

Parametrics

STP10NK60ZFP absolute maixmum ratings: (1)VDS Drain-source Voltage (VGS = 0): 600 V; (2)VDGR Drain-gate Voltage (RGS = 20 kΩ): 600 V; (3)VGS Gate- source Voltage: ± 30 V; (4)ID Drain Current (continuous) at TC = 25℃: 10 A; (5)ID Drain Current (continuous) at TC = 100℃: 5.7 A; (6)IDM Drain Current (pulsed): 36 A; (7)PTOT Total Dissipation at TC = 25℃: 35W; (8)VESD(G-S) Gate source ESD: 4000 V; (9)dv/dt Peak Diode Recovery voltage slope: 4.5 V/ns; (10)VISO Insulation Withstand Voltage (DC): 2500 V; (11)Tj Tstg Operating Junction Temperature: -55 to 150 ℃.

Features

STP10NK60ZFP features: (1)Typical RDS(on) = 0.65 W; (2)Extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.