Product Summary

The mrf6s27050h is a RF Power Field Effect Transistor designed for CDMA base station applications with frequencies from 2500 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.

Parametrics

mrf6s27050h absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5, +68 Vdc; (2)Gate-Source Voltage, VGS: -0.5, +12 Vdc; (3)Storage Temperature Range, Tstg: - 65 to +150℃; (4)Case Operating Temperature, TC: 150℃; (5)Operating Junction Temperature, TJ: 225℃.

Features

mrf6s27050h features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications; (6)RoHS Compliant; (7)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Diagrams

mrf6s27050h block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF6S27050HR3
MRF6S27050HR3
Freescale Semiconductor
Transistors RF MOSFET Power HV6 2700MHZ WCDMA NI780H
Data Sheet
0-1: $37.04
1-25: $31.12
25-50: $30.31
50-100: $29.17
MRF6S27050HR5
MRF6S27050HR5
Freescale Semiconductor
Transistors RF MOSFET Power HV6 2700MHZ WCDMA NI780H
Data Sheet
Negotiable 
MRF6S27050HSR5
MRF6S27050HSR5
Freescale Semiconductor
Transistors RF MOSFET Power HV6 2700MHZ WCDMA NI780S
Data Sheet
0-1: $37.04
1-25: $31.12
25-50: $29.18
50-100: $28.93
MRF6S27050HSR3
MRF6S27050HSR3
Freescale Semiconductor
Transistors RF MOSFET Power HV6 2700MHZ WCDMA NI780S
Data Sheet
Negotiable