(Hong Kong)
Product Summary
The GE28F800B3BA90 is a 3 Volt advanced boot block flash memory. This device will be available in 48-lead TSOP and 48-ball CSP packages. The x8 option of this product family will only be available in 40-lead TSOP and 48- ball μBGA packages.
Parametrics
GE28F800B3BA90 absolute maximum ratings: (1)Extended Operating Temperature During Read: –40 °C to +85 °C; (2)Storage Temperature:–65 °C to +125 °C; (3)Voltage on Any Pin (except VCC, VCCQ, VPP) with Respect to GND:–0.5 V to +3.7 V; (4)VPP Voltage (for Block Erase and Program) with Respect to GND: –0.5 V to +13.5 V; (5)VCC and VCCQ Voltage:–0.2 V to +3.7 V; (6)Output Short Circuit Current: 100 mA.
Features
GE28F800B3BA90 absolute maximum ratings: (1)Extended Operating Temperature During Read: –40 °C to +85 °C; (2)Storage Temperature:–65 °C to +125 °C; (3)Voltage on Any Pin (except VCC, VCCQ, VPP) with Respect to GND:–0.5 V to +3.7 V; (4)VPP Voltage (for Block Erase and Program) with Respect to GND: –0.5 V to +13.5 V; (5)VCC and VCCQ Voltage:–0.2 V to +3.7 V; (6)Output Short Circuit Current: 100 mA; (7)Power dissipation (DC): 3.6 W; (8)Current through input pin (DC): +/-2.0 mA.
Diagrams
